Preliminary Technical Information
Depletion Mode
MOSFET
IXTA6N100D2
IXTP6N100D2
IXTH6N100D2
V DSX
I D(on)
R DS(on)
=
>
1000V
6A
2.2 Ω
N-Channel
TO-263 AA (IXTA)
G
S
D (Tab)
Symbol
Test Conditions
Maximum Ratings
V DSX
V GSX
V GSM
T J = 25 ° C to 150 ° C
Continuous
Transient
1000
± 20
± 30
V
V
V
TO-220AB (IXTP)
DS
P D
T J
T JM
T stg
T L
T SOLD
M d
T C = 25 ° C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220 & TO-247)
300
- 55 ... +150
150
- 55 ... +150
300
260
1.13 / 10
W
° C
° C
° C
° C
° C
Nm/lb.in.
G
TO-247 (IXTH)
D (Tab)
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
G
D
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
? Normally ON Mode
? International Standard Packages
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
? Molding Epoxies Meet UL 94 V-0
Flammability Classification
BV DSX
V GS = - 5V, I D = 250 μ A
1000
V
Advantages
V GS(off)
V DS = 25V, I D = 250 μ A
- 2.5
- 4.5
V
? Easy to Mount
I GSX
I DSX(off)
V GS = ± 20V, V DS = 0V
V DS = V DSX , V GS = - 5V
T J = 125 ° C
± 100 nA
5 μ A
50 μ A
? Space Savings
? High Power Density
Applications
R DS(on)
I D(on)
V GS = 0V, I D = 3A, Note 1
V GS = 0V, V DS = 50V, Note 1
6
2.2
Ω
A
?
?
?
Audio Amplifiers
Start-Up Circuits
Protection Circuits
? 2009 IXYS CORPORATION, All Rights Reserved
?
?
?
Ramp Generators
Current Regulators
Active Loads
DS100183A(12/09)
相关PDF资料
IXTH6N120 MOSFET N-CH 1200V 6A TO-247AD
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IXTH6N90A MOSFET N-CH 900V 6A TO-247
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IXTH75N15 MOSFET N-CH 150V 75A TO-247
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相关代理商/技术参数
IXTH6N120 功能描述:MOSFET 6 Amps 1200V 2.700 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH6N150 功能描述:MOSFET HIGH VOLT PWR MOSFET 1500V 6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH6N50D2 功能描述:MOSFET N-CH MOSFETS (D2) 500V 6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH6N80 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:N-Channel Enhancement Mode
IXTH6N80A 功能描述:MOSFET 6 Amps 800 V 1.4 W Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH6N90 功能描述:MOSFET 6 Amps 900V 1.8 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH6N90A 功能描述:MOSFET 6 Amps 900V 1.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH72N20 功能描述:MOSFET 72 Amps 200V 0.033 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube